US 12,302,605 B2
Hafnium nitride adhesion layer
Kenneth C. Cadien, Edmonton (CA); Michael Clark, Edmonton (CA); Katherine Cook, Edmonton (CA); and Korel Dawkins, Edmonton (CA)
Assigned to ZINITE CORPORATION, Edmonton (CA)
Filed by ZINITE CORPORATION, Edmonton (CA)
Filed on Apr. 17, 2024, as Appl. No. 18/637,959.
Claims priority of provisional application 63/460,090, filed on Apr. 18, 2023.
Prior Publication US 2024/0355895 A1, Oct. 24, 2024
Int. Cl. H01L 21/28 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01)
CPC H10D 30/673 (2025.01) [H01L 21/28194 (2013.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6729 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A method of manufacturing a thin film transistor, the method comprising:
forming a hafnium nitride adhesion layer on at least a first region of a substrate, the hafnium nitride adhesion layer being formed via atomic layer deposition;
forming at least one of a source element and a drain element on the hafnium nitride adhesion layer in the at least first region of the substrate, the at least one of the source element and the drain element being formed of a metal with high electron concentration;
forming a metal oxide semiconductor layer on the substrate between the source element and the drain element;
forming a gate dielectric over the metal oxide semiconductor layer; and
forming a gate over the gate dielectric;
wherein the hafnium nitride adhesion layer adheres the at least one of the source element and the drain element of the metal with high electron concentration to the substrate, and wherein the hafnium nitride adhesion layer inhibits migration of oxygen from the substrate to the at least one of the source element and the drain element of the metal with high electron concentration.
 
7. A method of manufacturing a thin film transistor on a dielectric, comprising:
forming a hafnium nitride adhesion layer over at least a first region of the dielectric, the hafnium nitride adhesion layer being formed via atomic layer deposition;
forming at least one of a source element and a drain element over the hafnium nitride adhesion layer in the at least first region, the at least one of the source element and the drain element being formed of a metal with high electron concentration;
forming a metal oxide semiconductor layer between the source element and the drain element;
forming a gate dielectric over the metal oxide semiconductor layer; and
forming a gate over the gate dielectric;
wherein the hafnium nitride adhesion layer adheres the metal with high electron concentration to the dielectric, and wherein the hafnium nitride adhesion layer inhibits migration of oxygen from the dielectric to the metal with high electron concentration;
wherein the gate dielectric is hafnium dioxide and is formed by atomic layer deposition; and
wherein the hafnium nitride adhesion layer and the gate dielectric are formed from the same hafnium precursor.