US 12,302,602 B2
Semiconductor device
Shotaro Baba, Kanazawa Ishikawa (JP); Hiroaki Katou, Nonoichi Ishikawa (JP); Saya Shimomura, Komatsu Ishikawa (JP); and Tatsuya Nishiwaki, Yokohama Kanagawa (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed on Feb. 28, 2022, as Appl. No. 17/682,994.
Claims priority of application No. 2021-146266 (JP), filed on Sep. 8, 2021.
Prior Publication US 2023/0073420 A1, Mar. 9, 2023
Int. Cl. H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 64/23 (2025.01)
CPC H10D 30/668 (2025.01) [H10D 62/127 (2025.01); H10D 64/256 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first electrode;
a second electrode;
a semiconductor layer between the first electrode and the second electrode in a first direction;
a third electrode in the semiconductor layer, the third electrode extending in a second direction orthogonal to the first direction;
a plurality of fourth electrodes that are directly connected to the second electrode and extend in the first direction into the semiconductor layer, the plurality of fourth electrodes being spaced from one another along the second direction; and
a fifth electrode isolated from the first electrode, the fifth electrode being between the first electrode and the plurality of fourth electrodes and extending in the second direction, the fifth electrode contacting ends of the plurality of fourth electrodes, wherein
each of the fourth electrodes extends in the first direction to a point that is a distance from the first electrode along the first direction that is less than is a distance from the third electrode to first electrode along the first direction.