US 12,302,596 B2
Fin field-effect transistor and method of forming the same
Chao-Hsuan Chen, Hsinchu (TW); Ming-Chia Tai, Zhubei (TW); Yu-Hsien Lin, Kaohsiung (TW); Shun-Hui Yang, Jungli (TW); and Ryan Chia-Jen Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 26, 2024, as Appl. No. 18/587,381.
Application 18/587,381 is a continuation of application No. 17/461,135, filed on Aug. 30, 2021, granted, now 11,942,532.
Prior Publication US 2024/0250154 A1, Jul. 25, 2024
Int. Cl. H10D 30/01 (2025.01); H01L 21/28 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01); H10D 64/66 (2025.01); H10D 84/01 (2025.01); H10D 84/83 (2025.01)
CPC H10D 30/024 (2025.01) [H01L 21/28088 (2013.01); H10D 30/6211 (2025.01); H10D 64/015 (2025.01); H10D 64/017 (2025.01); H10D 64/667 (2025.01); H10D 84/0158 (2025.01); H10D 84/834 (2025.01); H10D 64/021 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device, comprising:
forming a work function metal layer over first structures and second structures in a first region and second region of a substrate, respectively;
depositing a coating layer on the work function metal layer under a loading condition such that a height of the coating layer in the first region is greater than a height of the coating layer in the second region;
removing portions of the coating layer to expose portions of the work function metal layer in the first and the second regions; and
performing a wet pull back etch to remove the exposed portions of the work function metal layer,
wherein the first region has first trenches adjacent to the first structures, the first trenches having a first upper portion and a first lower portion, the first upper portion being wider than the first lower portion,
wherein the second region has second trenches adjacent to the second structures, the second trenches having a second upper portion and a second lower portion, the second upper portion being wider than the second lower portion.