US 12,302,594 B2
Power semiconductor device and method of producing a power semiconductor device
Alim Karmous, Dresden (DE); and Thorsten Arnold, Jesenwang (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Sep. 28, 2022, as Appl. No. 17/954,830.
Prior Publication US 2023/0100846 A1, Mar. 30, 2023
Int. Cl. H10D 12/00 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 64/27 (2025.01)
CPC H10D 12/481 (2025.01) [H10D 30/0297 (2025.01); H10D 62/106 (2025.01); H10D 62/127 (2025.01); H10D 64/513 (2025.01)] 40 Claims
OG exemplary drawing
 
1. A power semiconductor device comprising an active region with a plurality of power cells, each configured to conduct a load current portion between a first load terminal and a second load terminal, wherein each power cell comprises:
a plurality of trenches;
a plurality of mesas laterally confined by the trenches and in a vertical direction adjoining a drift region of the power semiconductor device, wherein the plurality of mesas comprises an active mesa having a source region of a first conductivity type and a body region of a second conductivity type separating the source region from the drift region, wherein both the source region and the body region are electrically connected to the first load terminal, and wherein at least one of the trenches adjacent to the active mesa is configured to induce a conductive channel in the active mesa; and
a punch through structure electrically separated from the active mesa by at least one separation stack and comprising a first region of the first conductivity type arranged between a first junction and a second junction, and a second region of the second conductivity type arranged between the second junction and the active mesa,
wherein the first junction is either:
a pn-junction between the first region and a third region of the second conductivity type, the third region connecting the first junction to the first load terminal; or
a Schottky contact between the first load terminal and the first region,
wherein the second junction is a pn-junction between the first region and the second region,
wherein the second junction is connected to the active mesa through the second region.