US 12,302,593 B2
Semiconductor device
Daiki Yoshikawa, Kanazawa Ishikawa (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed on Sep. 1, 2022, as Appl. No. 17/901,632.
Claims priority of application No. 2022-045016 (JP), filed on Mar. 22, 2022.
Prior Publication US 2023/0307530 A1, Sep. 28, 2023
Int. Cl. H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H10D 12/00 (2025.01); H10D 62/10 (2025.01); H10D 64/27 (2025.01)
CPC H10D 12/481 (2025.01) [H10D 62/127 (2025.01); H10D 64/513 (2025.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first electrode;
a second electrode;
a first semiconductor region located on the first electrode, the first semiconductor region being of a first conductivity type;
a second semiconductor region located on the first semiconductor region, the second semiconductor region being of a second conductivity type;
a third semiconductor region located on the second semiconductor region, the third semiconductor region being of the first conductivity type;
a fourth semiconductor region located on a portion of the third semiconductor region and electrically connected with the second electrode, the fourth semiconductor region being of the second conductivity type;
a third electrode extending in a second direction and facing the third semiconductor region via a first insulating film in a third direction, the second direction being perpendicular to a first direction, the first direction being from the first semiconductor region toward the second semiconductor region, the third direction being perpendicular to the first and second directions;
a first contact region located on a portion of the third semiconductor region, arranged with the third electrode in the third direction, and electrically connected with the second electrode, the first contact region being of the first conductivity type and having a higher first-conductivity-type impurity concentration than the third semiconductor region; and
a fifth semiconductor region connected with the first contact region, the fifth semiconductor region being of the first conductivity type and having a higher first-conductivity-type impurity concentration than the third semiconductor region, the fifth semiconductor region including
a first portion arranged in the third direction with a boundary portion between the first insulating film and the third semiconductor region between the second semiconductor region and the fourth semiconductor region, and
a second portion arranged in the second direction with the boundary portion.