US 12,302,592 B2
Metal insulator metal (MIM) structure and manufacturing method thereof
Sai-Hooi Yeong, Hsinchu County (TW); Chih-Yu Chang, New Taipei (TW); Chun-Yen Peng, Hsinchu (TW); and Chi On Chui, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Nov. 24, 2023, as Appl. No. 18/518,638.
Application 18/518,638 is a continuation of application No. 18/155,757, filed on Jan. 18, 2023, granted, now 11,855,128.
Application 18/155,757 is a continuation of application No. 16/737,569, filed on Jan. 8, 2020, granted, now 11,563,079, issued on Jan. 24, 2023.
Prior Publication US 2024/0096928 A1, Mar. 21, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01G 4/20 (2006.01); H01G 4/08 (2006.01); H01G 13/00 (2013.01); H10D 1/68 (2025.01)
CPC H10D 1/692 (2025.01) [H01G 4/08 (2013.01); H01G 4/20 (2013.01); H01G 13/00 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate; and
a metallization structure over the substrate, comprising:
a metal-insulator-metal (MIM) structure, comprising:
a bottom electrode layer;
a dielectric layer on the bottom electrode layer;
a ferroelectric layer on the dielectric layer, wherein the ferroelectric layer is substantially made of lead zirconate titanate (PZT), BaTiO3 (BTO), or barium strontium titanate (BST), and a thickness of the ferroelectric layer is greater than a thickness of the dielectric layer; and
a top electrode layer on the ferroelectric layer;
a first contact electrically coupled to the top electrode layer; and
a second contact electrically coupled to the bottom electrode layer.