US 12,302,590 B2
Ferroelectric MFM capacitor array and methods of making the same
Chun-Chieh Lu, Taipei (TW); Mauricio Manfrini, Zhubei (TW); Marcus Johannes Hendricus Van Dal, Linden (BE); Chih-Yu Chang, Taipei (TW); Sai-Hooi Yeong, Zhubei (TW); Yu-Ming Lin, Hsinchu (TW); and Georgios Vallianitis, Heverlee (BE)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Aug. 1, 2023, as Appl. No. 18/363,217.
Application 18/363,217 is a division of application No. 17/222,193, filed on Apr. 5, 2021, granted, now 12,154,938.
Claims priority of provisional application 63/031,732, filed on May 29, 2020.
Prior Publication US 2023/0387186 A1, Nov. 30, 2023
Int. Cl. H10D 1/68 (2025.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01)
CPC H10D 1/68 (2025.01) [H01L 21/3212 (2013.01); H01L 21/32136 (2013.01)] 20 Claims
OG exemplary drawing
 
11. A method of making a capacitor, the method comprising:
forming a bottom contact extending lengthwise in a first direction on a substrate;
forming a ferroelectric layer on the bottom contact;
forming a plurality of middle contacts on the ferroelectric layer over the bottom contact; and
forming a crossbar structure including a plurality of first crossbar structure strips extending lengthwise in a second direction perpendicular to the first direction on the plurality of middle contacts, such that the plurality of middle contacts are between the bottom contact and the plurality of first crossbar structure strips of the crossbar structure.