US 12,302,585 B2
Memory device assembly with a leaker device
Fatma Arzum Simsek-Ege, Boise, ID (US); and Ashonita A. Chavan, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jun. 6, 2022, as Appl. No. 17/805,586.
Claims priority of provisional application 63/365,640, filed on Jun. 1, 2022.
Prior Publication US 2023/0397433 A1, Dec. 7, 2023
Int. Cl. H10B 53/30 (2023.01); H10B 51/10 (2023.01); H10B 51/30 (2023.01); H10B 53/10 (2023.01)
CPC H10B 53/30 (2023.02) [H10B 51/30 (2023.02); H10B 51/10 (2023.02); H10B 53/10 (2023.02)] 24 Claims
OG exemplary drawing
 
1. An integrated assembly, comprising:
a support pillar having a top surface, a bottom surface, and a circumferential surface;
a first electrode having:
a top surface,
an interior circumferential surface along and abutting the circumferential surface of the support pillar,
an exterior circumferential surface, and
a bottom surface that is below the bottom surface of the support pillar;
a leaker device having:
a bottom surface that abuts the top surface of the first electrode and the top surface of the support pillar, and
an exterior circumferential surface that is substantially vertically aligned with the exterior circumferential surface of the first electrode;
an insulator having:
a first vertical surface along and abutting the exterior circumferential surface of the first electrode and the exterior circumferential surface of the leaker device, and
a second vertical surface;
a second electrode having:
a first vertical surface along and abutting the second vertical surface of the insulator, and
a second vertical surface; and
a conductive plate that couples the second electrode with a plurality of other second electrodes that are substantially similar to the second electrode,
wherein the leaker device couples the first electrode to the conductive plate and is configured to discharge excess charge from the first electrode to the conductive plate.