| CPC H10B 43/27 (2023.02) [H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/40 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02)] | 20 Claims |
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1. A semiconductor device, comprising:
a first structure including a substrate, circuit elements on the substrate, and a lower wiring structure electrically connected to the circuit elements; and
a second structure on the first structure, the second structure including:
a conductive plate layer;
a stack structure including interlayer insulating layers and gate electrodes alternately stacked on the conductive plate layer;
separation structures penetrating through the stack structure in a vertical direction and extending in a first direction, perpendicular to the vertical direction, to separate the gate electrodes;
vertical structures penetrating through the stack structure in the vertical direction, the vertical structures including channel structures respectively including a channel layer, contact structures respectively including a metal plug, and dummy structures; and
bit lines electrically connected to the channel structures and extending in a second direction, perpendicular to the first direction, on the stack structure, wherein:
at least one contact structure of the contact structures is disposed adjacent to at least one side of at least one of the separation structures,
at least one dummy structure of the dummy structures is disposed adjacent to the at least one contact structure,
the channel structures are arranged at a first pitch in the first direction, the at least one contact structure is arranged at a second pitch in the first direction from the at least one dummy structure adjacent thereto, and
the first pitch and the second pitch are substantially equal to each other.
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