US 12,302,569 B2
Semiconductor device and manufacturing method of semiconductor device
Sun Mi Park, Icheon-si (KR); Eun Mee Kwon, Icheon-si (KR); and Hyung Jun Yang, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Apr. 27, 2022, as Appl. No. 17/730,805.
Claims priority of application No. 10-2021-0145676 (KR), filed on Oct. 28, 2021.
Prior Publication US 2023/0140566 A1, May 4, 2023
Int. Cl. H10B 43/27 (2023.01); H10B 41/27 (2023.01); H10B 63/00 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 41/27 (2023.02); H10B 63/34 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a gate structure including conductive layers and insulating layers, which are alternately stacked;
channel structures penetrating the gate structure, the channel structures being arranged in a first direction; and
a cutting structure extending in the first direction, the cutting structure consecutively penetrating the channel structures,
wherein each of the channel structures includes a first channel in structure and a second channel structure, which are isolated from each other by the cutting structure, and
wherein portions of the first channel structure and the second channel structure, which are in contact with the cutting structure, are concave.