US 12,302,567 B2
Three-dimensional memory device and manufacturing method thereof
Sung Lae Oh, Icheon-si (KR); Sang Hyun Sung, Icheon-si (KR); and Hyun Soo Shin, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Mar. 24, 2022, as Appl. No. 17/703,893.
Claims priority of application No. 10-2021-0142597 (KR), filed on Oct. 25, 2021.
Prior Publication US 2023/0129701 A1, Apr. 27, 2023
Int. Cl. H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A method for manufacturing a three-dimensional memory device, comprising:
forming a through hole that passes through a stack including a plurality of first material layers and a plurality of second material layers alternately stacked on a substrate in a vertical direction;
forming a mask to fill the through hole and to cover the stack;
forming an opening that passes vertically through the mask and that aligns with a center portion of the through hole;
expanding, in a horizontal direction, the opening in the mask disposed on the stack to expose the through hole and a portion of a top surface of the stack around the through hole; and
partially etching the stack exposed by the opening.