US 12,302,566 B2
Semiconductor memory device and method for manufacturing the same
Shinya Fujise, Mie (JP)
Assigned to KIOXIA CORPORATION, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Mar. 3, 2022, as Appl. No. 17/685,896.
Claims priority of application No. 2021-140474 (JP), filed on Aug. 30, 2021.
Prior Publication US 2023/0061224 A1, Mar. 2, 2023
Int. Cl. H10B 43/27 (2023.01)
CPC H10B 43/27 (2023.02) 7 Claims
OG exemplary drawing
 
1. A semiconductor memory device comprising:
a first stacked body including a first insulating film and a first conductive film alternately stacked in a first direction, the first insulating film including a first material;
a plurality of first columnar bodies including a first semiconductor portion and extending through the first stacked body in the first direction;
a second insulating film disposed on the first stacked body and including a second material different from the first material;
a first insulating portion disposed on the second insulating film; and
a first film penetrating at least the second insulating film in the first direction and extending in a second direction intersecting the first direction;
wherein an interface between the first film and the second insulating film has a step profile in a cross section substantially perpendicular to the second direction, and the step profile is between a top surface and a bottom surface of the second insulating film.