US 12,302,565 B2
Semiconductor storage device
Takashi Fukushima, Mie (JP); Yuji Sakai, Mie (JP); Hiroshi Itokawa, Mie (JP); Tatsunori Isogai, Mie (JP); and Ryosuke Sawabe, Mie (JP)
Assigned to KIOXIA CORPORATION, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Mar. 1, 2022, as Appl. No. 17/683,963.
Claims priority of application No. 2021-146058 (JP), filed on Sep. 8, 2021.
Prior Publication US 2023/0073505 A1, Mar. 9, 2023
Int. Cl. H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A semiconductor storage device, comprising:
a plurality of conductive layers arranged in a first direction;
a semiconductor layer extending in the first direction, and facing the plurality of conductive layers;
a charge storage layer disposed between the plurality of conductive layers and the semiconductor layer;
a first structure (i) disposed apart from the semiconductor layer in a second direction intersecting the first direction, (ii) extending in a third direction intersecting the first direction and the second direction, and (iii) facing the plurality of conductive layers;
a plurality of first nitride films containing nitrogen (N), the plurality of first nitride films covering surfaces of the plurality of conductive layers facing the first structure;
a first insulating layer disposed between two conductive layers adjacent to each other in the first direction among the plurality of conductive layers; and
an additional nitride film containing nitrogen (N) and covering a surface of the first insulating layer facing the first structure.