| CPC H10B 12/485 (2023.02) [H01L 21/32139 (2013.01); H10B 12/09 (2023.02); H10B 12/482 (2023.02)] | 15 Claims |
|
1. A semiconductor device, comprising:
a substrate that includes a plurality of cell blocks and a peripheral block, each cell block including a cell center region, a cell edge region, and a cell middle region between the cell center region and the cell edge region; and
a plurality of bit lines that extend along a first direction on each cell block, the first direction being parallel to a top surface of the substrate,
wherein the bit lines include a plurality of center bit lines on the cell center region, a plurality of middle bit lines on the cell middle region, and a plurality of edge bit lines on the cell edge region,
wherein each of the bit lines has a first lateral surface and a second lateral surface that are opposite to each other in a second direction, the second direction being parallel to the top surface of the substrate and intersecting the first direction,
wherein the first lateral surface straightly extends along the first direction on the cell center region, the cell middle region, and the cell edge region, and
wherein the second lateral surface straightly extends along the first direction on each of the cell center region and the cell edge region, and the second lateral surface extends along a third direction, that intersects the first direction and the second direction, on the cell middle region.
|