| CPC H10B 12/315 (2023.02) [H01L 29/1037 (2013.01); H10B 12/033 (2023.02); H10B 12/48 (2023.02)] | 20 Claims |
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1. A method comprising:
forming a conductive line in a substrate;
depositing an insulating layer over the substrate;
patterning a first opening in the insulating layer, the first opening extending perpendicular to the conductive line;
forming a conductive structure in the first opening;
patterning a second opening in the insulating layer, the second opening exposing a sidewall of the conductive structure and the conductive line;
depositing a channel layer in the second opening;
depositing a gate dielectric layer over the channel layer;
depositing a gate electrode over the gate dielectric layer;
recessing the gate dielectric layer, the gate electrode, and the conductive structure, the channel layer extending above the gate electrode; and
depositing an isolation structure surrounding the channel layer, the isolation structure having an upper surface level with an upper surface of the channel layer.
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