US 12,302,547 B2
Memory device and method of manufacturing the memory device
Jae Taek Kim, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on May 27, 2022, as Appl. No. 17/826,812.
Claims priority of application No. 10-2021-0182933 (KR), filed on Dec. 20, 2021.
Prior Publication US 2023/0200047 A1, Jun. 22, 2023
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/20 (2023.02) [H10B 12/09 (2023.02); H10B 12/312 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a connection structure formed on a substrate;
lower contacts formed on the connection structure;
upper contacts formed on the lower contacts;
a dummy pattern configured to enclose the lower contacts and spaced apart from the lower contacts;
etching stop patterns formed in an upper region of the dummy pattern; and
dummy contacts formed over the etching stop patterns.