US 12,302,508 B2
Temporary carrier and method for manufacturing coreless substrate thereby
Xianming Chen, Guangdong (CN); Jian Peng, Guangdong (CN); Jida Zhang, Guangdong (CN); Benxia Huang, Guangdong (CN); Lei Feng, Guangdong (CN); Bingsen Xie, Guangdong (CN); and Jun Gao, Guangdong (CN)
Assigned to Zhuhai ACCESS Semiconductor Co., Ltd, Guangdong (CN)
Filed by Zhuhai ACCESS Semiconductor Co., Ltd, Guangdong (CN)
Filed on May 31, 2022, as Appl. No. 17/829,253.
Application 17/829,253 is a division of application No. 17/038,898, filed on Sep. 30, 2020, granted, now 11,399,440.
Claims priority of application No. 202010592220.3 (CN), filed on Jun. 24, 2020.
Prior Publication US 2022/0295646 A1, Sep. 15, 2022
Int. Cl. H05K 3/46 (2006.01); H05K 1/03 (2006.01); H05K 3/02 (2006.01)
CPC H05K 3/4682 (2013.01) [H05K 1/036 (2013.01); H05K 3/022 (2013.01); H05K 2201/0355 (2013.01); H05K 2203/0152 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A temporary carrier, comprising:
a core layer;
a first Cu foil layer and a second Cu foil layer on surfaces of both sides of the core layer,
wherein each of the first Cu foil layer and the second Cu foil layer comprises double Cu foils which are physically attached together,
wherein the double Cu foils comprise an outer layer Cu foil and an inner layer Cu foil, and the outer layer Cu foil has a width less than that of the inner layer Cu foil such that an outer edge region of the inner layer Cu foil is exposed,
wherein an etching resist layer is applied on surface of the first Cu foil layer and the second Cu foil layer, and the etching resist layer covers the outer edge region of the inner layer Cu foil,
wherein the etching resisting layer comprises a Ni layer.