CPC H04N 25/772 (2023.01) [H04N 25/47 (2023.01)] | 12 Claims |
1. A solid-state imaging element, comprising:
a pixel array unit that includes:
a set of normal pixels in two rows by two columns, wherein
a normal pixel of the set of normal pixels is configured to output an analog signal; and
a plurality of detection pixels, wherein
the plurality of detection pixels includes a set of detection pixels in two rows by two columns,
the set of detection pixels is adjacent to the set of normal pixels,
a detection pixel of the plurality of detection pixels is configured to:
detect that an amount of change in incident light becomes larger than a first threshold; and
output a detection result, and
the detection pixel includes:
a pixel circuit configured to generate a voltage signal by photoelectric conversion of the incident light;
a differentiation circuit configured to generate a differentiation signal corresponding to a change in the voltage signal with respect to a reference value, wherein the reference value corresponds to a value of the voltage signal at a time of reset of the differentiation circuit; and
a comparator configured to compare a level of the differentiation signal with the first threshold and a second threshold to output one of a high-level comparison result or a low-level comparison result as the detection result, wherein the first threshold is higher than the second threshold.
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