US 12,301,217 B2
Common gate drive circuit for switching high voltage device
Tetsuo Sato, San Jose (CA)
Assigned to RENESAS ELECTRONICS AMERICA INC., Milpitas, CA (US)
Filed by RENESAS ELECTRONICS AMERICA INC., Milpitas, CA (US)
Filed on Dec. 12, 2022, as Appl. No. 18/064,340.
Prior Publication US 2024/0195401 A1, Jun. 13, 2024
Int. Cl. H03K 17/082 (2006.01); H03K 17/042 (2006.01); H02M 1/08 (2006.01)
CPC H03K 17/04206 (2013.01) [H02M 1/08 (2013.01); H03K 17/0822 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a voltage source configured to provide a fixed bias voltage to a first device implemented as a common gate device;
a second device connected in series with the first device, wherein a current output of the second device is connected to a source terminal of the first device; and
a driver configured to;
sense an ON current of the second device; and
drive the second device to perform current control on the first device.