US 12,301,207 B1
Techniques for adding compensating material(s) in semiconductor devices
Paul M. Hagelin, Saratoga, CA (US); and Charles I. Grosjean, Los Gatos, CA (US)
Assigned to SiTime Corporation, Santa Clara, CA (US)
Filed by SiTime Coporation, Santa Clara, CA (US)
Filed on Aug. 14, 2023, as Appl. No. 18/449,089.
Application 17/901,748 is a division of application No. 17/363,386, filed on Jun. 30, 2021, granted, now 11,469,734, issued on Oct. 11, 2022.
Application 17/363,386 is a division of application No. 16/702,765, filed on Dec. 4, 2019, granted, now 11,082,024, issued on Aug. 3, 2021.
Application 16/702,765 is a division of application No. 15/916,088, filed on Mar. 8, 2018, granted, now 10,541,666, issued on Jan. 21, 2020.
Application 15/916,088 is a division of application No. 15/387,375, filed on Dec. 21, 2016, granted, now 9,948,273, issued on Apr. 17, 2018.
Application 15/387,375 is a division of application No. 14/863,337, filed on Sep. 23, 2015, granted, now 9,548,720, issued on Jan. 17, 2017.
Application 14/863,337 is a division of application No. 14/191,939, filed on Feb. 27, 2014, granted, now 9,148,073, issued on Sep. 29, 2015.
Application 14/191,939 is a division of application No. 13/562,684, filed on Jul. 31, 2012, granted, now 8,667,665, issued on Mar. 11, 2014.
Application 13/562,684 is a division of application No. 11/963,709, filed on Dec. 21, 2007, granted, now 8,234,774, issued on Aug. 7, 2012.
Application 18/449,089 is a continuation of application No. 17/901,748, filed on Sep. 1, 2022, granted, now 11,764,751.
Int. Cl. H03B 5/30 (2006.01); H02N 1/00 (2006.01); H03B 5/32 (2006.01); H03H 3/007 (2006.01); H03H 9/02 (2006.01); H03H 9/125 (2006.01); H03H 9/15 (2006.01); H03H 9/21 (2006.01); H03H 9/24 (2006.01); H10N 30/01 (2023.01); H10N 30/04 (2023.01)
CPC H03H 9/02448 (2013.01) [H02N 1/00 (2013.01); H03B 5/30 (2013.01); H03B 5/32 (2013.01); H03H 3/0072 (2013.01); H03H 3/0073 (2013.01); H03H 3/0076 (2013.01); H03H 9/02244 (2013.01); H03H 9/02433 (2013.01); H03H 9/125 (2013.01); H03H 9/21 (2013.01); H03H 9/2405 (2013.01); H03H 9/2468 (2013.01); H03H 9/2484 (2013.01); H10N 30/01 (2023.02); H10N 30/04 (2023.02); H03H 2009/02251 (2013.01); H03H 2009/02283 (2013.01); H03H 2009/02291 (2013.01); H03H 2009/02299 (2013.01); H03H 2009/02322 (2013.01); H03H 2009/0233 (2013.01); H03H 2009/02496 (2013.01); H03H 2009/155 (2013.01); Y10T 29/42 (2015.01); Y10T 29/49002 (2015.01); Y10T 29/49005 (2015.01); Y10T 29/4902 (2015.01); Y10T 29/4908 (2015.01)] 21 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a body;
the body having one or more layers of semiconductor material collectively presenting a first value of a temperature-dependent parameter;
a trench or a slot defined within an opening in a planar surface presented by at least one layer of the one or more layers of the semiconductor material;
one or more compensating materials substantially filling the trench or slot, the one or more compensating materials collectively presenting a second value of the temperature-dependent parameter;
the body having a temperature-dependent characteristic dependent on each of the first value and the second value;
the semiconductor device being manufactured according to a fabrication process that produces an outer surface of the one or more compensating materials within the trench or slot wherein the outer surface is substantially coplanar with the planar surface; and
a continuous layer of conductive material deposited over the one or more layers and the one or more compensating materials within the trench, so as to cap the one or more compensating materials within the trench or slot;
wherein:
the body defines a beam having a swinging end which is operable to deflect or move during operation of the semiconductor device; and
the swinging end is substantially encased in the conductive material.