US 12,301,095 B2
Semiconductor device
Shin Suzuki, Tokyo (JP); and Toshiya Tadakuma, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Dec. 21, 2022, as Appl. No. 18/069,926.
Claims priority of application No. 2022-046690 (JP), filed on Mar. 23, 2022.
Prior Publication US 2023/0308008 A1, Sep. 28, 2023
Int. Cl. H02M 7/5387 (2007.01); H02M 1/08 (2006.01)
CPC H02M 1/08 (2013.01) [H02M 7/5387 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a power module in which at least one semiconductor switching element is contained; and
a self-generating power supply circuit connected to the power module, wherein
the power module includes at least one output terminal where a voltage change occurs at an on-off frequency of the semiconductor switching element, as a result of switching of connection relation with a power supply line for supply of a DC voltage, in accordance with on and off of the semiconductor switching element,
the self-generating power supply circuit includes
an input node connected to the output terminal or the power supply line via a first capacitor interposed between the output terminal and the input node, and to which the voltage change at the on-off frequency of the semiconductor switching element is transferred from the output terminal via the first capacitor such that a frequency of a voltage change of the input node is the same as the on-off frequency of the semiconductor switching element,
a diode connected in a predetermined connection direction between an output node and the input node,
a second capacitor connected between a reference node and the output node, and
a resistor connected between the input node and a ground line, and
the second capacitor holds a voltage across the reference node and the output node, in polarity in accordance with the connection direction of the diode.