US 12,300,764 B2
Semiconductor device comprising electron blocking layer
Chia-Ming Liu, Hsinchu (TW); Chang-Hua Hsieh, Hsinchu (TW); Yung-Chung Pan, Hsinchu (TW); Chang-Yu Tsai, Hsinchu (TW); Ching-Chung Hu, Hsinchu (TW); Ming-Pao Chen, Hsinchu (TW); Chi Shen, Hsinchu (TW); and Wei-Chieh Lien, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Jan. 6, 2023, as Appl. No. 18/094,185.
Application 18/094,185 is a continuation of application No. 17/221,563, filed on Apr. 2, 2021, granted, now 11,600,746.
Application 17/221,563 is a continuation of application No. 16/513,264, filed on Jul. 16, 2019, granted, now 10,971,652, issued on Apr. 6, 2021.
Application 16/513,264 is a continuation in part of application No. 15/875,735, filed on Jan. 19, 2018, granted, now 11,056,434, issued on Jul. 6, 2021.
Claims priority of provisional application 62/450,824, filed on Jan. 26, 2017.
Prior Publication US 2023/0144521 A1, May 11, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/14 (2010.01); H01L 33/06 (2010.01); H01L 33/26 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/26 (2013.01) [H01L 33/06 (2013.01); H01L 33/145 (2013.01); H01L 33/325 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first semiconductor structure;
a second semiconductor structure on the first semiconductor structure;
an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and first barrier layers, wherein each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface;
a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer has a band gap greater than the band gap of one of the first barrier layers;
a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer; and
a second aluminum-containing layer on a side of the first electron blocking layer opposite to the first aluminum-containing layer, wherein the second aluminum-containing layer has a second thickness and a band gap greater than the band gap of the first electron blocking layer;
wherein a ratio of the second thickness of the second aluminum-containing layer to the first thickness of the first aluminum-containing layer is between 0.8 and 1.2,
wherein one of the first thickness and the second thickness is smaller than a thickness of one of the first barrier layers, and
wherein the second thickness is smaller than a thickness of the first electron blocking layer.