US 12,300,749 B2
Source/drain features with improved strain properties
Chih-Ching Wang, Kinmen County (TW); Wen-Yuan Chen, Taoyuan County (TW); Wen-Hsing Hsieh, Hsinchu (TW); Kuan-Lun Cheng, Hsin-Chu (TW); Chung-Wei Wu, Hsin-Chu County (TW); and Zhiqiang Wu, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Aug. 10, 2023, as Appl. No. 18/447,483.
Application 18/447,483 is a division of application No. 17/314,815, filed on May 7, 2021.
Prior Publication US 2023/0387301 A1, Nov. 30, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/7847 (2013.01) [H01L 21/0259 (2013.01); H01L 21/26526 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66742 (2013.01); H01L 29/7848 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
10. A device, comprising:
a channel region comprising a plurality of nanostructures over a substrate;
a gate structure comprising a first portion under a topmost nanostructure of the plurality of nanostructures and a second portion over the plurality of nanostructures;
source/drain features adjacent to the channel region, the source/drain features each including a first epitaxial layer and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a dopant different from the first epitaxial layer;
inner spacer features providing isolation between the source/drain features and the first portion of the gate structure;
a plurality of dislocations extending into the source/drain features; and
a recrystallized region disposed in the substrate, wherein, in a cross-sectional view cut through the gate structure and the source/drain features, one of the plurality of dislocations extends from the recrystallized region into the first epitaxial layer and terminates on a sidewall surface of a bottommost inner spacer feature of the inner spacer features.