US 12,300,739 B2
Metal oxide interlayer structure for NFET and PFET
Min Cao, Hsinchu (TW); Pei-Yu Wang, Hsinchu (TW); Sai-Hooi Yeong, Hsinchu County (TW); Ching-Wei Tsai, Hsinchu (TW); Kuan-Lun Cheng, Hsinchu (TW); and Chih-Hao Wang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Feb. 26, 2024, as Appl. No. 18/586,735.
Application 18/175,137 is a division of application No. 17/508,595, filed on Oct. 22, 2021, granted, now 11,594,612, issued on Feb. 28, 2023.
Application 17/508,595 is a division of application No. 16/895,436, filed on Jun. 8, 2020, granted, now 11,158,721, issued on Oct. 26, 2021.
Application 18/586,735 is a continuation of application No. 18/175,137, filed on Feb. 27, 2023, granted, now 11,916,128.
Claims priority of provisional application 62/894,200, filed on Aug. 30, 2019.
Prior Publication US 2024/0194762 A1, Jun. 13, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/516 (2013.01) [H01L 21/0206 (2013.01); H01L 21/823828 (2013.01); H01L 21/823857 (2013.01); H01L 27/092 (2013.01); H01L 29/42364 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
an nFET structure having a first channel region and a first gate structure over the first channel region, the first gate structure including:
a first metal oxide layer having a first chemical composition; and
a first ferroelectric layer landing on a top surface of the first metal oxide layer, the first ferroelectric layer having a second chemical composition different than the first chemical composition; and
a pFET structure having a second channel region and a second gate structure over the second channel region, the second gate structure including:
a second ferroelectric layer having the second chemical composition; and
a second metal oxide layer landing on a top surface of the second ferroelectric layer, the second metal oxide layer having the first chemical composition.