US 12,300,736 B2
Transistors and memory arrays
Scott E. Sills, Boise, ID (US); and Durai Vishak Nirmal Ramaswamy, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jan. 25, 2023, as Appl. No. 18/101,120.
Application 18/101,120 is a division of application No. 16/940,746, filed on Jul. 28, 2020, granted, now 11,605,723.
Prior Publication US 2023/0163189 A1, May 25, 2023
Int. Cl. H01L 21/00 (2006.01); H01L 29/40 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H10B 12/00 (2023.01); H10B 53/10 (2023.01); H10B 53/20 (2023.01); H10B 53/30 (2023.01); H01L 29/24 (2006.01); H10B 53/40 (2023.01)
CPC H01L 29/513 (2013.01) [H01L 29/408 (2013.01); H01L 29/516 (2013.01); H01L 29/7827 (2013.01); H10B 12/31 (2023.02); H10B 53/10 (2023.02); H10B 53/20 (2023.02); H10B 53/30 (2023.02); H01L 29/24 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/78391 (2014.09); H10B 12/50 (2023.02); H10B 53/40 (2023.02)] 22 Claims
OG exemplary drawing
 
1. A transistor comprising semiconductor oxide channel material, conductive gate material adjacent the channel material, and a heterogenous insulative region between the gate material and the channel material;
wherein the heterogeneous insulative region includes an interfacial region between first and second insulative compositions, with said interfacial region including a gradient transitioning from the first insulative composition to the second insulative composition, a thickness of the gradient transitioning is greater than a thickness of the first insulative composition; and
wherein the first insulative composition comprises one or more of transition metal oxide, zirconium, zirconium oxide, niobium, niobium oxide, hafnium, hafnium oxide, lead zirconium titanate, and barium strontium titanate.