US 12,300,726 B2
Semiconductor device and semiconductor device manufacturing method
Takashi Yoshimura, Matsumoto (JP); Yuichi Onozawa, Matsumoto (JP); Hiroshi Takishita, Matsumoto (JP); Misaki Meguro, Matsumoto (JP); Motoyoshi Kubouchi, Matsumoto (JP); and Naoko Kodama, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed by FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed on Oct. 12, 2023, as Appl. No. 18/485,336.
Application 17/577,361 is a division of application No. 16/799,733, filed on Feb. 24, 2020, granted, now 11,239,324, issued on Feb. 1, 2022.
Application 18/485,336 is a continuation of application No. 17/577,361, filed on Jan. 17, 2022, granted, now 11,824,095.
Application 16/799,733 is a continuation of application No. PCT/JP2019/011180, filed on Mar. 18, 2019.
Claims priority of application No. 2018-051655 (JP), filed on Mar. 19, 2018.
Prior Publication US 2024/0047535 A1, Feb. 8, 2024
Int. Cl. H01L 29/36 (2006.01); H01L 21/22 (2006.01); H01L 21/265 (2006.01); H01L 21/322 (2006.01); H01L 29/06 (2006.01); H01L 29/12 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01)
CPC H01L 29/36 (2013.01) [H01L 21/22 (2013.01); H01L 21/265 (2013.01); H01L 21/322 (2013.01); H01L 29/06 (2013.01); H01L 29/12 (2013.01); H01L 29/739 (2013.01); H01L 29/78 (2013.01); H01L 29/861 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate having a transistor portion and a diode portion;
a drift region of a first conductivity type provided in the semiconductor substrate;
a first electrode provided on a side of one main surface of the semiconductor substrate; and
a second electrode provided on a side of another main surface of the semiconductor substrate, wherein
the diode portion includes:
a high concentration region that has a doping concentration higher than a doping concentration of the drift region and includes hydrogen, the doping concentration of the high concentration region at a peak position in a depth direction of the semiconductor substrate being equal to or less than 1.0×1015/cm3;
a crystalline defect region that (i) is provided on the side of the one main surface of the semiconductor substrate relative to the peak position, (ii) has a higher crystalline defect density than the drift region, and (iii) includes hydrogen;
an anode region of a second conductivity type; and
a cathode region of the first conductivity type, and wherein
one of the anode region or the cathode region is in contact with the one main surface and provided between the high concentration region and the one main surface in the depth direction,
another one of the anode region or the cathode region is in contact with the another main surface, and
the crystalline defect region reaches the one of the anode region or the cathode region in contact with the one main surface.