US 12,300,724 B2
Method of manufacturing silicon carbide semiconductor devices
Andreas Meiser, Sauerlach (DE); Caspar Leendertz, Munich (DE); Anton Mauder, Kolbermoor (DE); and Roland Rupp, Lauf (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Oct. 7, 2021, as Appl. No. 17/496,050.
Application 16/745,015 is a division of application No. 15/934,518, filed on Mar. 23, 2018, granted, now 10,586,851.
Application 17/496,050 is a continuation of application No. 16/745,015, filed on Jan. 16, 2020, granted, now 11,177,354.
Claims priority of application No. 102017106398.6 (DE), filed on Mar. 24, 2017.
Prior Publication US 2022/0028980 A1, Jan. 27, 2022
Int. Cl. H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/1608 (2013.01) [H01L 21/02529 (2013.01); H01L 29/0623 (2013.01); H01L 29/0696 (2013.01); H01L 29/402 (2013.01); H01L 29/417 (2013.01); H01L 29/41766 (2013.01); H01L 29/42376 (2013.01); H01L 29/66068 (2013.01); H01L 29/7804 (2013.01); H01L 29/7813 (2013.01); H01L 29/045 (2013.01); H01L 29/0649 (2013.01); H01L 29/407 (2013.01); H01L 29/7396 (2013.01); H01L 29/7397 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a trench structure extending from a first surface of a silicon carbide semiconductor body into the silicon carbide semiconductor body, the trench structure comprising a gate electrode that is dielectrically insulated from the silicon carbide semiconductor body;
a shielding region adjoining a bottom of the trench structure and forming a first pn junction with a drift structure of the silicon carbide semiconductor body;
a body region forming a second pn junction with the drift structure;
a source zone arranged between the first surface and the body region and forming a third pn junction with the body region; and
a contact portion of the body region that extends to the first surface;
wherein the source zone surrounds the contact portion of the body region at the first surface, and
wherein the trench structure forms an enclosed loop at the first surface that surrounds the source zone and the contact portion of the body region at the first surface,
wherein the trench structure further comprises an auxiliary electrode.