US 12,300,715 B2
Capacitor structure
Chang-Yu Huang, Hsinchu County (TW); Yi Hsuan Lin, Taichung (TW); and Chih-Pin Hung, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Feb. 14, 2022, as Appl. No. 17/671,225.
Prior Publication US 2023/0261038 A1, Aug. 17, 2023
Int. Cl. H01L 27/01 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/86 (2013.01) [H01L 23/5223 (2013.01); H01L 27/01 (2013.01); H01L 28/90 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A capacitor structure, comprising:
a first electrode, wherein the first electrode includes a first segment and a third segment extending in a first direction;
a second electrode, wherein the second electrode includes a second segment and a fourth segment extending in the first direction, the second segment is interposed between the first segment and the third segment, and the third segment is interposed between the second segment and the fourth segment;
a first distance between the first segment and the second segment;
a second distance between the second segment and the third segment; and
a third distance between the third segment and the fourth segment,
wherein the first distance is different from the second distance,
wherein the first segment of the first electrode is disposed in a first region, and the third segment of the first electrode, the second segment of the second electrode and the fourth segment of the second electrode are disposed in a second region,
wherein a capacitance of the capacitor structure in the first region is different from a capacitance of the capacitor structure in the second region, and
wherein a total capacitance of the capacitor structure is uniform in different voltage bias.