US 12,300,711 B2
Integrated sensor for lifetime characterization
Eric A.G. Webster, Santa Clara, CA (US); Changhoon Choi, Palo Alto, CA (US); Dajiang Yang, San Jose, CA (US); Xin Wang, San Jose, CA (US); Todd Rearick, Cheshire, CT (US); Kyle Preston, Guilford, CT (US); Ali Kabiri, Guilford, CT (US); and Gerard Schmid, Guilford, CT (US)
Assigned to Quantum-Si Incorporated, Branford, CT (US)
Filed by Quantum-Si Incorporated, Branford, CT (US)
Filed on Nov. 27, 2023, as Appl. No. 18/520,502.
Application 18/520,502 is a continuation of application No. 17/149,574, filed on Jan. 14, 2021, granted, now 11,869,917.
Claims priority of provisional application 62/961,133, filed on Jan. 14, 2020.
Prior Publication US 2024/0096924 A1, Mar. 21, 2024
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14643 (2013.01) [H01L 27/14683 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit, comprising:
a photodetection region;
at least one drain layer configured to receive incident photons and/or charge carriers via the photodetection region; and
at least one charge storage region electrically coupled to the photodetection region by a charge transfer channel region,
wherein the at least one drain layer is positioned, in a first direction in which the photodetection region is configured to receive incident photons, after the photodetection region, and at least a portion of the at least one drain layer is disposed after a first charge storage region of the at least one charge storage region in the first direction,
wherein the at least one drain layer includes a collection layer configured to provide the charge carriers to a direct current (DC) voltage when the collection layer is electrically coupled to the DC voltage, and the at least a portion of the at least one drain layer includes at least a portion of the collection layer,
wherein the at least one drain layer further includes a protection layer disposed between the collection layer and the photodetection region, the protection layer having a first conductivity type and the collection layer having a second conductivity type opposite the first conductivity type, and
wherein the at least one drain layer further comprises a first barrier region positioned after the first charge storage region in the first direction, wherein the first barrier region and the first charge storage region have opposite conductivity types.