US 12,300,707 B2
Image sensing device
Jae Won Lee, Icheon-si (KR)
Assigned to SK HYNIX INC., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Oct. 12, 2021, as Appl. No. 17/499,698.
Claims priority of application No. 10-2020-0159666 (KR), filed on Nov. 25, 2020.
Prior Publication US 2022/0165760 A1, May 26, 2022
Int. Cl. H01L 27/146 (2006.01); H04N 25/77 (2023.01)
CPC H01L 27/1461 (2013.01) [H01L 27/14627 (2013.01); H04N 25/77 (2023.01)] 16 Claims
OG exemplary drawing
 
1. An image sensing device, comprising:
a substrate including a front side and a back side that are opposite to each other, wherein the image sensing device is structured to operate by receiving incident light through the back side of the substrate;
a depletion region disposed in the substrate to be in contact with the back side of the substrate;
an epitaxial layer disposed in the substrate to be in contact with or near the front side of the substrate; and
a plurality of detection structures disposed in the epitaxial layer, each configured to capture photocharge generated by incident light and move by a current flowing in the epitaxial layer,
wherein each of the plurality of detection structures includes a control node including P-type impurities and a detection node including N-type impurities, and
wherein the epitaxial layer includes the N-type impurities.