US 12,300,598 B2
Package structure and method of fabricating the same
Yi-Wen Wu, New Taipei (TW); Hung-Jui Kuo, Hsinchu (TW); and Ming-Che Ho, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 22, 2021, as Appl. No. 17/180,877.
Application 17/180,877 is a continuation of application No. 16/416,278, filed on May 20, 2019, granted, now 10,930,586.
Application 16/416,278 is a continuation of application No. 15/716,476, filed on Sep. 26, 2017, granted, now 10,297,544, issued on May 21, 2019.
Prior Publication US 2021/0175168 A1, Jun. 10, 2021
Int. Cl. H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/532 (2006.01); H01L 23/538 (2006.01); H01L 25/10 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/53204 (2013.01); H01L 23/5389 (2013.01); H01L 24/05 (2013.01); H01L 24/09 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/105 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05657 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/11002 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/221 (2013.01); H01L 2924/15174 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package structure, comprising:
a dielectric layer having a first surface and a second surface opposite to each other, and having an opening extending from the first surface to the second surface;
a die disposed over the second surface of the dielectric layer;
an insulating encapsulation disposed on the second surface of the dielectric layer and encapsulating the die;
a second conductive pattern disposed aside the die, and extending from an upper surface of the insulating encapsulation to a lower surface of the insulating encapsulation to form a conductive via having a U-shaped cross-section, wherein a bottom horizontal portion of the U-shaped cross-section of the conductive via is exposed by the opening of the dielectric layer; and
a barrier layer disposed in the opening of the dielectric layer, wherein a width of the barrier layer is less than a width of the bottom horizontal portion of the U-shaped cross-section of the conductive via,
wherein the die is attached to the second surface of the dielectric layer through a die-attach film (DAF), and a bottom surface of the DAF is substantially level with a bottom surface of the bottom horizontal portion of the U-shaped cross-section of the conductive via.