US 12,300,564 B2
Transistor device structure with angled wire bonds
Kyoung-Keun Lee, Cary, NC (US); and Tim McManus, Henderson, NC (US)
Assigned to Wolfspeed, Inc., Durham, NC (US)
Filed by Wolfspeed, Inc., Durham, NC (US)
Filed on Oct. 18, 2021, as Appl. No. 17/503,733.
Prior Publication US 2023/0124581 A1, Apr. 20, 2023
Int. Cl. H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/3192 (2013.01) [H01L 21/56 (2013.01); H01L 23/3121 (2013.01); H01L 23/3171 (2013.01); H01L 24/48 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2924/13091 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A transistor device, comprising:
a substrate;
a gate contact pad on the substrate;
a transistor die on the substrate adjacent the gate contact pad, wherein the transistor die comprises an active region and a gate bond pad adjacent the active region, wherein the gate bond pad has a side edge adjacent the active region that extends in a first direction; and
a plurality of bonding wires bonded to the gate contact pad at a first end of each of the plurality of bonding wires and to the gate bond pad at a second end of each of the plurality of bonding wires;
wherein each of the plurality of bonding wires extends in a second direction that is oblique to the first direction such that each of the plurality of bonding wires forms an angle relative to the first direction that is less than 60 degrees, and wherein the bonding wire has a diameter greater than 20 microns.