US 12,300,541 B2
Structure and formation method of semiconductor device with carbon-containing conductive structure
Wei-Hao Liao, Taichung (TW); Hsi-Wen Tien, Xinfeng Township, Hsinchu County (TW); Yu-Teng Dai, Hsinchu County (TW); Chih-Wei Lu, Hsinchu (TW); Hsin-Chieh Yao, Hsinchu (TW); and Hwei-Jay Chu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 18, 2022, as Appl. No. 17/578,102.
Prior Publication US 2023/0230881 A1, Jul. 20, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/76876 (2013.01) [H01L 23/5226 (2013.01); H01L 23/53276 (2013.01); H01L 21/28556 (2013.01); H01L 21/31116 (2013.01); H01L 21/76802 (2013.01); H01L 21/76868 (2013.01); H01L 21/76883 (2013.01); H01L 21/76885 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a substrate;
a conductive line over the substrate;
a catalyst structure over the conductive line;
a carbon-containing conductive via on the catalyst structure;
a first dielectric layer surrounding the carbon-containing conductive via;
a second dielectric layer between the first dielectric layer and the substrate, wherein the second dielectric layer surrounds the conductive line; and
an enclosed hole surrounded by the carbon-containing conductive via, the conductive line, and the second dielectric layer.