US 12,300,502 B2
Method for fabricating semiconductor structure, and semiconductor structure
Chenming Xu, Hefei (CN); Hongbo Lin, Hefei (CN); and He Wu, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jun. 17, 2022, as Appl. No. 17/842,788.
Application 17/842,788 is a continuation of application No. PCT/CN2022/087494, filed on Apr. 18, 2022.
Claims priority of application No. 202210373096.0 (CN), filed on Apr. 11, 2022.
Prior Publication US 2023/0326760 A1, Oct. 12, 2023
Int. Cl. H01L 21/31 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01); H01L 21/76 (2006.01)
CPC H01L 21/31055 (2013.01) [H01L 21/76879 (2013.01); H01L 21/7688 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor structure, comprising:
providing a substrate covered with a conductive layer;
removing part of the conductive layer by dry etching to form a first groove, a depth of the first groove being less than a thickness of the conductive layer, and there being polymer residue on a groove wall of the first groove;
removing remaining part of the conductive layer corresponding to the groove wall and a groove bottom of the first groove to form conductive lines and a second groove between adjacent two of the conductive lines, wherein the polymer residue on the groove wall of the first groove is removed while forming the second groove; and
forming a passivation layer filled into the second groove; and wherein
the removing the part of the conductive layer by dry etching to form the first groove comprises:
forming a first mask layer on the conductive layer, the first mask layer having a first etching opening; and
etching the conductive layer by using the first mask layer as a mask to form the first groove; and
the removing the remaining part of the conductive layer corresponding to the groove wall and a groove bottom of the first groove to form conductive lines and a second groove between adjacent two of the conductive lines comprises:
forming a second mask layer on the conductive layer, the second mask layer being provided with a second etching opening arranged directly facing the first groove, and an area of an orthographic projection of the second etching opening on the substrate being greater than the area of the orthographic projection of the first etching opening on the substrate; and
etching the conductive layer by using the second mask layer as a mask to form the conductive lines and the second groove.