US 12,300,467 B2
Plasma processing method and plasma processing apparatus
Manabu Oie, Miyagi (JP); Takanori Banse, Miyagi (JP); and Toru Hisamatsu, Hillsboro, OR (US)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on May 20, 2022, as Appl. No. 17/749,149.
Claims priority of provisional application 63/191,001, filed on May 20, 2021.
Prior Publication US 2022/0375724 A1, Nov. 24, 2022
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32449 (2013.01) [H01J 37/32091 (2013.01); H01J 2237/332 (2013.01); H01J 2237/3346 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A plasma processing method, comprising:
(a) mounting a substrate, including a first mask layer formed on a first layer and the first layer including a metal-containing layer therein to be partially exposed, on a stage disposed inside a processing container of a plasma processing apparatus;
(b) supplying a process gas, containing one or more of fluorocarbon gas and hydrofluorocarbon gas, into the processing container;
(c) supplying a first radio-frequency power in the processing container to form a plasma from the process gas;
after a time period has elapsed from a stop of (c), (d) supplying a second radio-frequency power to the stage, the second radio-frequency power having a frequency lower than a frequency of the first radio-frequency power; and
(e) repeating (c) and (d), wherein
a duration of (c) is longer than the time period and is longer than a duration of (d).