US 12,300,353 B2
Memory device and memory system
Seung-Jun Shin, Incheon (KR); and Tae-Young Oh, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 25, 2023, as Appl. No. 18/238,232.
Application 18/238,232 is a continuation of application No. 17/862,718, filed on Jul. 12, 2022, granted, now 11,749,326.
Application 17/862,718 is a continuation of application No. 17/387,036, filed on Jul. 28, 2021, granted, now 11,715,507, issued on Aug. 1, 2023.
Application 17/387,036 is a continuation of application No. 16/874,916, filed on May 15, 2020, granted, now 11,081,152, issued on Aug. 3, 2021.
Application 16/874,916 is a continuation of application No. 16/717,742, filed on Dec. 17, 2019, granted, now 10,930,330, issued on Feb. 23, 2021.
Application 16/717,742 is a continuation of application No. 16/169,178, filed on Oct. 24, 2018, granted, now 10,579,263, issued on Mar. 3, 2020.
Application 16/169,178 is a continuation of application No. 15/690,379, filed on Aug. 30, 2017, granted, now 10,114,548, issued on Oct. 30, 2018.
Application 15/690,379 is a continuation of application No. 15/180,175, filed on Jun. 13, 2016, granted, now 9,754,649, issued on Sep. 5, 2017.
Claims priority of application No. 10-2015-0126786 (KR), filed on Sep. 8, 2015.
Prior Publication US 2023/0410863 A1, Dec. 21, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01); G06F 13/16 (2006.01); G11C 7/10 (2006.01); G11C 7/22 (2006.01); G11C 8/06 (2006.01); G11C 8/10 (2006.01); G11C 8/18 (2006.01); G11C 11/4076 (2006.01)
CPC G11C 8/06 (2013.01) [G06F 3/06 (2013.01); G06F 13/1689 (2013.01); G11C 7/10 (2013.01); G11C 7/1045 (2013.01); G11C 7/22 (2013.01); G11C 8/10 (2013.01); G11C 8/18 (2013.01); G11C 11/4076 (2013.01); G11C 7/1057 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a memory cell array including a plurality of memory cells; and
a control logic configured to:
receive an active command which is split into a first portion and a second portion, the active command including a bank address and a row address for activating a word line corresponding to the bank address and the row address; and
receive a column address strobe (CAS) command between the first portion and the second portion of the active command.