| CPC G06F 11/1004 (2013.01) [G06F 11/0703 (2013.01); G06F 11/073 (2013.01); G06F 11/1679 (2013.01); H03M 13/09 (2013.01)] | 20 Claims |

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1. A dynamic random access memory (DRAM) integrated circuit, comprising:
circuitry to receive a write command and an associated address, from a memory controller;
circuitry to generate a first error detection code dependent on the associated address, the first error detection code to be used to determine whether the associated address as received by the DRAM contains an error;
circuitry to receive from the memory controller, after a delay time with respect to the write command, associated write data to be written into a memory array of the DRAM integrated circuit;
circuitry to generate, for the associated write data, a second error detection code, the second error detection code to be used to determine whether the associated write data as received by the DRAM contains an error; and
circuitry to transmit to the memory controller information to permit the DRAM integrated circuit to detect error in the associated address separately from error in the associated write data.
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