US 12,298,640 B2
Display device and method for manufacturing display device
Masashi Tsubuku, Tokyo (JP); Takeshi Sakai, Tokyo (JP); and Tatsuya Toda, Tokyo (JP)
Assigned to Japan Display Inc., Tokyo (JP)
Filed by Japan Display Inc., Tokyo (JP)
Filed on Mar. 4, 2024, as Appl. No. 18/594,462.
Application 18/594,462 is a continuation of application No. 17/447,740, filed on Sep. 15, 2021, granted, now 11,927,859.
Application 17/447,740 is a continuation of application No. PCT/JP2020/011184, filed on Mar. 13, 2020.
Claims priority of application No. 2019-063815 (JP), filed on Mar. 28, 2019.
Prior Publication US 2024/0248361 A1, Jul. 25, 2024
Int. Cl. G02F 1/1368 (2006.01); H10K 59/124 (2023.01); H10K 71/00 (2023.01); H10K 59/12 (2023.01)
CPC G02F 1/1368 (2013.01) [H10K 59/124 (2023.02); H10K 71/00 (2023.02); H10K 59/1201 (2023.02)] 24 Claims
OG exemplary drawing
 
1. A display device comprising:
a transistor including a gate electrode, an oxide semiconductor layer overlapping the gate electrode, and source/drain electrodes; and
a gate insulating layer between the gate electrode and the oxide semiconductor layer,
wherein each of the source/drain electrodes includes a first conductive layer above the oxide semiconductor layer, a second conductive layer on the first conductive layer, and a third conductive layer between the first conductive layer and the oxide semiconductor layer,
the first conductive layer contains titanium and nitrogen,
the second conductive layer contains a metal material,
the third conductive layer contains titanium, oxygen, and a part of the metal materials contained in the oxide semiconductor layer,
a titanium content in the first conductive layer is larger than a titanium content in the third conductive layer, and
the third conductive layer is on and in physical contact with the oxide semiconductor layer.