Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
Brett R. Goldsmith, San Diego, CA (US); Mitchell Lerner, San Diego, CA (US); and Paul Hoffman, San Diego, CA (US)
Assigned to Cardea Bio, Inc., San Diego, CA (US)
Filed by Cardea Bio, Inc., San Diego, CA (US)
Filed on Aug. 28, 2023, as Appl. No. 18/457,155.
Application 18/457,155 is a continuation of application No. 17/528,540, filed on Nov. 17, 2021, granted, now 11,782,057.
Application 17/528,540 is a continuation of application No. 17/329,090, filed on May 24, 2021, granted, now 11,536,722, issued on Dec. 27, 2022.
Application 17/329,090 is a continuation of application No. 16/586,964, filed on Sep. 28, 2019, granted, now 11,016,088, issued on May 25, 2021.
Application 16/586,964 is a continuation of application No. 16/014,838, filed on Jun. 21, 2018, granted, now 10,429,381, issued on Oct. 1, 2019.
Application 16/014,838 is a continuation of application No. 15/256,493, filed on Sep. 2, 2016, granted, now 10,006,910, issued on Jun. 26, 2018.
Application 15/256,493 is a continuation in part of application No. 15/239,800, filed on Aug. 17, 2016, granted, now 9,857,328, issued on Jan. 2, 2018.
Application 15/239,800 is a continuation in part of application No. 15/225,764, filed on Aug. 1, 2016, granted, now 10,020,300, issued on Jul. 10, 2018.
Application 15/225,764 is a continuation in part of application No. 15/182,533, filed on Jun. 14, 2016, granted, now 9,859,394, issued on Apr. 11, 2017.
Application 15/225,764 is a continuation in part of application No. 15/065,744, filed on Mar. 9, 2016, granted, now 9,618,474, issued on Apr. 11, 2017.
Application 15/182,533 is a continuation in part of application No. 14/963,253, filed on Dec. 9, 2015, granted, now 10,429,342, issued on Oct. 1, 2019.
Claims priority of provisional application 62/215,018, filed on Sep. 6, 2015.
Claims priority of provisional application 62/214,912, filed on Sep. 5, 2015.
Claims priority of provisional application 62/214,892, filed on Sep. 4, 2015.
Claims priority of provisional application 62/214,850, filed on Sep. 4, 2015.
Claims priority of provisional application 62/214,910, filed on Sep. 4, 2015.
Claims priority of provisional application 62/214,901, filed on Sep. 4, 2015.
Claims priority of provisional application 62/213,117, filed on Sep. 2, 2015.
Claims priority of provisional application 62/213,112, filed on Sep. 2, 2015.
Claims priority of provisional application 62/213,151, filed on Sep. 2, 2015.
Claims priority of provisional application 62/206,372, filed on Aug. 18, 2015.
Claims priority of provisional application 62/206,814, filed on Aug. 18, 2015.
Claims priority of provisional application 62/205,803, filed on Aug. 17, 2015.
Claims priority of provisional application 62/206,228, filed on Aug. 17, 2015.
Claims priority of provisional application 62/206,224, filed on Aug. 17, 2015.
Claims priority of provisional application 62/206,166, filed on Aug. 17, 2015.
Claims priority of provisional application 62/205,808, filed on Aug. 17, 2015.
Claims priority of provisional application 62/203,228, filed on Aug. 17, 2015.
Claims priority of provisional application 62/199,987, filed on Aug. 1, 2015.
Claims priority of provisional application 62/199,956, filed on Jul. 31, 2015.
Claims priority of provisional application 62/175,384, filed on Jun. 14, 2015.
Claims priority of provisional application 62/175,351, filed on Jun. 14, 2015.
Claims priority of provisional application 62/175,349, filed on Jun. 14, 2015.
Claims priority of provisional application 62/130,621, filed on Mar. 10, 2015.
Claims priority of provisional application 62/130,594, filed on Mar. 9, 2015.
Claims priority of provisional application 62/130,601, filed on Mar. 9, 2015.
Claims priority of provisional application 62/130,598, filed on Mar. 9, 2015.
Claims priority of provisional application 62/094,016, filed on Dec. 18, 2014.
Prior Publication US 2023/0408510 A1, Dec. 21, 2023
a sensor chip fabricated on a semiconductor wafer, the sensor chip comprising:
a graphene channel patterned in a graphene layer disposed on a dielectric substrate;
a first electrode formed in electrode material so as to form one or more of an edge side contact or a top side contact in electrical contact with a first end of the graphene channel;
a second electrode formed in electrode material so as to form one or more of an edge side contact or a top-side contact in electrical contact with a second end of the graphene channel; and
an insulation layer that is layered above at least of portion of the graphene layer and is selected from an inorganic oxide layer and an organic layer.
