| CPC C23C 16/52 (2013.01) [B05D 1/60 (2013.01); C23C 16/4401 (2013.01); C23C 16/45565 (2013.01); C23C 16/458 (2013.01); C23C 16/48 (2013.01)] | 15 Claims |
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1. A film forming system comprising:
a film forming apparatus configured to form a film on a substrate;
a measurement device configured to measure a light reflectance for each wavelength in a film formed at a predetermined position in the film forming apparatus; and
a control device configured to control the film forming apparatus and the measurement device,
wherein the film forming apparatus comprises:
a processing container;
a stage provided in the processing container and configured to place the substrate on the stage;
a structure having recesses and provided at the predetermined position, which is located outside a region where the substrate is placed on the stage, in the processing container;
a window provided above the predetermined position where the structure is provided and in a wall surface, which is at a position facing the structure, of the processing container and formed by a light-transmitting member;
a first heater configured to control a temperature of the substrate; and
a second heater provided separately from the first heater and configured to control a temperature of the structure,
wherein the measurement device comprises:
a light emitter configured to emit light having a plurality of wavelengths to the structure via the window;
a light receiver configured to receive light for each wavelength reflected from the structure via the window; and
a measurer configured to measure a light reflectance for each wavelength of a film formed at a bottom portion of the recesses of the structure based on an intensity of the light emitted to the film formed at the bottom portion of the recesses and an intensity of the light reflected from the film formed at the bottom portion of the recesses,
wherein the control device comprises:
an estimator configured to estimate a thickness of the film formed on the substrate based on the light reflectance for each wavelength of the film formed at the bottom portion of the recesses; and
a controller configured to stop film formation on the substrate when the estimated thickness of the film reaches a predetermined thickness,
wherein a thickness of the film formed at the bottom portion of the recesses is thicker than the thickness of the film formed on the substrate, and
wherein the control device is further configured to:
control the second heater such that the structure and the substrate have a same temperature during a film forming process; and
when cleaning an interior of the processing container, control the second heater such that the structure has a temperature higher than the temperature of the structure during the film forming process.
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