US 12,297,532 B2
Metal chalcogenide film and method and device for manufacturing the same
Kyung-Eun Byun, Seongnam-si (KR); Hyoungsub Kim, Seoul (KR); Taejin Park, Yongin-si (KR); Hyeonjin Shin, Suwon-si (KR); Hoijoon Kim, Daejeon (KR); Wonsik Ahn, Bucheon-si (KR); and Mirine Leem, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR); and Research & Business Foundation Sungyunkwan University, Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR); and RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Gyeonggi-Do (KR)
Filed on Jun. 9, 2023, as Appl. No. 18/332,638.
Application 18/332,638 is a continuation of application No. 16/861,614, filed on Apr. 29, 2020, granted, now 11,708,633.
Claims priority of application No. 10-2019-0051818 (KR), filed on May 2, 2019.
Prior Publication US 2023/0313365 A1, Oct. 5, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/30 (2006.01); B22F 7/00 (2006.01); C23C 16/448 (2006.01); C23C 16/455 (2006.01); C23C 16/46 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 31/032 (2006.01)
CPC C23C 16/305 (2013.01) [B22F 7/008 (2013.01); C23C 16/448 (2013.01); C23C 16/45502 (2013.01); C23C 16/45514 (2013.01); C23C 16/46 (2013.01); H01L 21/02568 (2013.01); H01L 21/02581 (2013.01); H01L 21/28568 (2013.01); H01L 31/0324 (2013.01); B22F 2207/01 (2013.01); B22F 2302/45 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A device comprising:
a metal chalcogenide thin film; and
at least one electrodes,
wherein the metal chalcogenide film comprises:
a transition metal element; and
a chalcogen element,
wherein at least one of the transition metal element and the chalcogen element has a composition gradient along an upper surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient.