US 12,297,527 B2
P-type gallium oxide film, and preparation method and application thereof
Yunbin He, Wuhan (CN); Zhouyang Luo, Wuhan (CN); Daotian Shi, Wuhan (CN); Yinmei Lu, Wuhan (CN); Mingkai Li, Wuhan (CN); Jian Chen, Wuhan (CN); and Lufeng Chen, Wuhan (CN)
Assigned to Hubei University, Wuhan (CN)
Filed by Hubei University, Wuhan (CN)
Filed on Aug. 21, 2024, as Appl. No. 18/811,486.
Claims priority of application No. 202311060691.X (CN), filed on Aug. 22, 2023.
Prior Publication US 2024/0410047 A1, Dec. 12, 2024
Int. Cl. C23C 14/06 (2006.01); C23C 14/02 (2006.01); C23C 14/34 (2006.01); C23C 14/58 (2006.01); H10F 71/00 (2025.01); H10F 77/12 (2025.01)
CPC C23C 14/0617 (2013.01) [C23C 14/021 (2013.01); C23C 14/3414 (2013.01); C23C 14/3435 (2013.01); C23C 14/5806 (2013.01); H10F 71/00 (2025.01); H10F 77/12 (2025.01)] 11 Claims
OG exemplary drawing
 
1. A method for preparing a p-type gallium oxide film, comprising:
preparing a MxGa1-xN target material, wherein M is selected from the group consisting of Al, Sc, In, Y and Lu, and 0<x<1;
preparing a substrate; and
placing the substrate in a vacuum chamber of a deposition apparatus; with the MxGa1-xN target material as nitrogen source and gallium source, subjecting the MxGa1-xN target material to ablation, sputtering or thermal evaporation by physical vapor deposition to obtain MxGa1-xN clusters; and oxidizing the MxGa1-xN clusters with oxygen to grow a N-doped p-type gallium oxide film on the substrate.