US 12,297,375 B2
Slurry composition and method for polishing and integrated circuit
Ji Cui, Bolingbrook, IL (US); Chi-Jen Liu, Taipei (TW); Liang-Guang Chen, Hsinchu (TW); Kei-Wei Chen, Tainan (TW); Chun-Wei Hsu, Hsinchu (TW); Li-Chieh Wu, Hsinchu (TW); Peng-Chung Jangjian, Hsinchu (TW); Kao-Feng Liao, Hsinchu (TW); Fu-Ming Huang, Changhua County (TW); Wei-Wei Liang, Hsinchu (TW); Tang-Kuei Chang, Tainan (TW); and Hui-Chi Huang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jan. 5, 2021, as Appl. No. 17/141,988.
Claims priority of provisional application 63/031,505, filed on May 28, 2020.
Prior Publication US 2021/0371702 A1, Dec. 2, 2021
Int. Cl. C09G 1/02 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01)
CPC C09G 1/02 (2013.01) [H01L 21/3212 (2013.01); H01L 21/76805 (2013.01); H01L 21/7684 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A slurry composition for polishing, comprising:
a slurry for polishing a first conductive material, wherein the slurry consists of:
a liquid carrier;
abrasives; and
an oxidizer, wherein the oxidizer consists of a perborate; and
a rheology modifier dispensed in the slurry, wherein the rheology modifier comprises an acrylic resin, and the rheology modifier comprises locust bean gum or guar gum,
wherein the abrasives, the oxidizer and the rheology modifier form a blocking layer over a second conductive material different from the first conductive material, wherein a thickness of the blocking layer ranges from about 1 angstrom to about 10 angstroms.