US 12,296,428 B2
Chemical mechanical polishing apparatus and method
Yen-Liang Chen, Taichung (TW); Jun-Xiu Liu, Taichung (TW); and Chia-Hsien Chou, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Oct. 18, 2019, as Appl. No. 16/657,161.
Claims priority of provisional application 62/751,725, filed on Oct. 29, 2018.
Prior Publication US 2020/0130134 A1, Apr. 30, 2020
Int. Cl. B24B 37/32 (2012.01); B24B 49/12 (2006.01); H01L 21/321 (2006.01)
CPC B24B 37/32 (2013.01) [B24B 49/12 (2013.01); H01L 21/3212 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
performing, using a chemical mechanical polishing (CMP) system, a CMP process on a wafer;
after performing the CMP process, capturing an image of a gap between an inner retaining ring and an outer retaining ring of a polish head of the CMP system using an image capture device, wherein the image capturing device is moved along a circular rail between the inner retaining ring and the outer retaining ring during capturing the image; and
observing a surface roughness of an inner sidewall of the inner retaining ring and a surface roughness of an inner sidewall of the outer retaining ring based on the captured image.