US 12,295,273 B2
Electronic device and method for manufacturing electronic device
Myoung Sub Kim, Icheon (KR); Tae Hoon Kim, Icheon (KR); Beom Seok Lee, Icheon (KR); Seung Yun Lee, Icheon (KR); Hwan Jun Zang, Icheon (KR); Byung Jick Cho, Icheon (KR); and Ji Sun Han, Icheon (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Feb. 28, 2024, as Appl. No. 18/590,813.
Application 18/590,813 is a continuation of application No. 17/847,034, filed on Jun. 22, 2022, granted, now 11,950,522.
Application 17/847,034 is a continuation of application No. 16/984,688, filed on Aug. 4, 2020, granted, now 11,430,952, issued on Aug. 30, 2022.
Claims priority of application No. 10-2020-0027405 (KR), filed on Mar. 4, 2020.
Prior Publication US 2024/0251687 A1, Jul. 25, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 70/00 (2023.01); H10B 61/00 (2023.01); H10B 63/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/841 (2023.02) [H10B 61/00 (2023.02); H10B 63/84 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 70/011 (2023.02); H10N 70/231 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A semiconductor memory comprising:
a row line;
a column line intersecting the row line; and
a memory cell located between the row line and the column line, the memory cell including a first carbon electrode material and a second carbon electrode material,
wherein the second carbon electrode material is formed on a surface of the first carbon electrode material, and
wherein a thickness of the second carbon electrode material is less than a thickness of the first carbon electrode material.