US 12,295,271 B2
Crossbar memory array in back end of line with crystallization front
Devendra K. Sadana, Pleasantville, NY (US); Ning Li, White Plains, NY (US); and Bahman Hekmatshoartabari, White Plains, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Dec. 7, 2021, as Appl. No. 17/457,930.
Prior Publication US 2023/0180638 A1, Jun. 8, 2023
Int. Cl. H10N 70/20 (2023.01); G06N 3/08 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/231 (2023.02) [G06N 3/08 (2013.01); H10B 63/80 (2023.02); H10N 70/011 (2023.02); H10N 70/826 (2023.02); H10N 70/884 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a crystallization seed layer in a substrate;
a phase change material layer on the substrate, the phase change material layer directly above the crystallization seed layer and extending beyond the crystallization seed layer, wherein the phase change material layer comprises a similar lattice constant as a lattice constant of the crystallization seed layer;
a top electrode on the substrate, adjacent to a first vertical side surface and overlapping a first portion of an upper horizontal surface of the phase change material layer, wherein the first vertical side surface of the phase change material layer is aligned above the crystallization seed layer;
a bottom electrode on the substrate, adjacent to a second vertical side surface and overlapping a second portion of the upper horizontal surface of the phase change material layer; and
a dielectric material horizontally isolating the bottom electrode and the top electrode.