| CPC H10N 60/0128 (2023.02) [H10N 60/855 (2023.02)] | 8 Claims |

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1. A low-cost and high-strength Bi-based superconducting wire/tape prepared by a preparation method of the low-cost and high-strength Bi-based superconducting wire/tape, wherein the low-cost and high strength Bi-based superconducting wire/tape includes at least one of: Ag or an Ag alloy as a sheathing material, and a copper layer as a coating, wherein a content of the Ag in the Ag or an Ag alloy as a sheathing material is about 50%, wherein the low-cost and high-strength Bi-based superconducting wire/tape is prepared at least in part by an electrochemical silver reduction process with an ultra-low stress, wherein the low-cost and high-strength Bi-based superconducting wire/tape is fabricated by a method comprising following steps:
step 1: electrochemical silver reduction: connecting a first Bi-based superconducting wire/tape to a positive electrode of a stabilized voltage power supply, connecting a graphite electrode to a negative electrode of the stabilized voltage power supply, and arranging the first Bi-based superconducting wire/tape and the graphite electrode in parallel on a bracket; and adding an electrolyte to allow the electrochemical silver reduction, such that a Ag alloy layer on a surface of the first Bi-based superconducting wire/tape is removed to obtain a second Bi-based superconducting wire/tape; and
step 2: surface enhancement: connecting the second Bi-based superconducting wire/tape obtained after the electrochemical silver reduction in the step 1 to the negative electrode of the stabilized voltage power supply, connecting a copper sheet to the positive electrode of the stabilized voltage power supply, and arranging the second Bi-based superconducting wire/tape and the copper sheet in parallel on the bracket; and adding an electrochemical additive solution to allow the surface reinforcement, such that a Cu layer is formed on a surface of the second Bi-based superconducting wire/tape to obtain the low-cost and high-strength Bi-based superconducting wire/tape, wherein:
in the step 2, a distance between the second Bi-based superconducting wire/tape and the copper sheet is 2 cm to 5 cm,
a current density of the surface of the second Bi-based superconducting wire/tape is 0.1 A/dm2 to 10 A/dm2,
the surface enhancement is conducted for 0.1 min to 20 min, and
a thickness of the Cu layer is 10 μm to 40 μm.
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