US 12,295,267 B2
Semiconductor device and method of manufacturing the same
Bi-Shen Lee, Hsinchu (TW); Hai-Dang Trinh, Hsinchu (TW); and Hsun-Chung Kuang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Apr. 29, 2022, as Appl. No. 17/733,564.
Prior Publication US 2023/0354717 A1, Nov. 2, 2023
Int. Cl. H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01)
CPC H10N 50/80 (2023.02) [H10B 61/22 (2023.02); H10N 50/01 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a first dielectric layer disposed on the substrate;
an etching stop layer disposed on the first dielectric layer;
a second dielectric layer disposed on the etching stop layer, wherein the first dielectric layer, the etching stop layer, and the second dielectric layer collectively define an opening; and
a conductive via disposed in the opening; and
a data storage structure disposed on the conductive via,
wherein the etching stop layer comprises a treated portion, and the treated portion comprises halide.