| CPC H10N 10/17 (2023.02) [H10N 10/01 (2023.02); H10N 10/855 (2023.02)] | 21 Claims |
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1. A thermoelectric module comprising:
a stack structure including an insulating layer and a plurality of thermoelectric elements with the insulating layer interposed therebetween in a stacking direction such that all thermoelectric elements of the stack structure are embedded within the insulating layer, the plurality of thermoelectric elements each including a first-type semiconductor device, a second-type semiconductor device, a first electrode connected to the first-type semiconductor device and spaced apart from the second-type semiconductor devices of the plurality of thermoelectric elements, a second electrode connected to the second-type semiconductor device and spaced apart from the first-type semiconductor devices of the plurality of thermoelectric elements, and a connection electrode connecting the first-type and second-type semiconductor devices;
first and second external electrodes respectively disposed on first and second surfaces of the stack structure to overlap each other in the stacking direction, and respectively connected to one of the first and second electrodes; and
a conductive via penetrating through the insulating layer to connect a first-type semiconductor device to a second-type semiconductor device of respective thermoelectric elements adjacent to each other, among the plurality of thermoelectric elements.
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