| CPC H10K 85/626 (2023.02) [H10K 85/624 (2023.02); H10K 85/654 (2023.02); H10K 85/6572 (2023.02); H10K 50/11 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 50/17 (2023.02); H10K 50/18 (2023.02); H10K 50/19 (2023.02); H10K 2101/10 (2023.02); H10K 2101/30 (2023.02)] | 20 Claims |

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1. A light-emitting device comprising:
a first electrode;
a second electrode facing the first electrode;
m emission units located between the first electrode and the second electrode; and
m−1 charge generation layer(s), each located between two adjacent emission units among the m emission units, and comprising m−1 n-type charge generation layer(s) and m−1 p-type charge generation layer(s),
wherein m is an integer of 2 or greater,
the m emission units each comprise a hole transport region, an emission layer, and an electron transport region, which are sequentially arranged,
a first hole transport region in a first emission unit closest among the m emission units to the first electrode comprises a hole transfer layer and at least one of a hole injection layer or a hole transport layer, which are sequentially arranged between the first electrode and a first emission layer in the first emission unit,
the hole transfer layer is a single layer consisting of an electron-transporting compound,
the electron-transporting compound comprises a phosphine oxide group (P═O), a phosphine sulfide group (P═S), a π electron-deficient nitrogen-containing C1-C60 cyclic group, or any combination thereof, and
a highest occupied molecular orbital (HOMO) energy level of the hole transfer layer is about −6.0 electron volts (eV) to about −5.3 eV.
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